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1

FinFET versus Gate-All-Around Nanowire FET: Performance, Scaling and Variability

Nagy, Daniel, Indalecio, Guillermo, Indalecio, Guillermo, Garcia-Loureiro, Antonio J., Elmessary, Muhammad A., Elmessary, Muhammad A., Kalna, Karol, Seoane, Natalia

Journal:

IEEE Journal of the Electron Devices Society

Year:

2018

Language:

english

File:

PDF, 5.29 MB

english, 2018

2

Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations

Elmessary, Muhammad A., Nagy, Daniel, Aldegunde, Manuel, Seoane, Natalia, Indalecio, Guillermo, Lindberg, Jari, Dettmer, Wulf, Perić, Djordje, García-Loureiro, Antonio J., Kalna, Karol

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.54 MB

english, 2017

3

Efficiency increase of a-Si:H solar cells with optimized front and back contact textures

Fortes, M., Belfar, A., Garcia-Loureiro, A.J.

Journal:

Optik - International Journal for Light and Electron Optics

Year:

2018

Language:

english

File:

PDF, 1.74 MB

english, 2018

4

Study of parallel numerical methods for semiconductor device simulation

Natalia Seoane, Antonio J. García-Loureiro

Journal:

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Year:

2006

Language:

english

File:

PDF, 289 KB

english, 2006

5

Multi-Subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI

C. Sampedro, F. Gámiz, A. Godoy, R. Valín, A. García-Loureiro, F.G. Ruiz

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 1.02 MB

english, 2010

6

Impact of intrinsic parameter fluctuations on the performance of HEMTs studied with a 3D parallel drift-diffusion simulator

N. Seoane, A.J. García-Loureiro, K. Kalna, A. Asenov

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 461 KB

english, 2007

7

Simulation of the spin polarization and the charge transport in Zener tunnel junctions based on ferromagnetic GaAs and ZnO

Comesaña, E., Aldegunde, M., Garcia-Loureiro, A.J.

Journal:

Computer Physics Communications

Year:

2013

Language:

english

File:

PDF, 1.02 MB

english, 2013

8

[IEEE 2011 Spanish Conference on Electron Devices (CDE) - Palma de Mallorca, Spain (2011.02.8-2011.02.11)] Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 - An e-Science infrastructure for nanoeletronic simulations based on grid and cloud technologies

Gomez-Folgar, F., Cacheiro, J. Lopez, Sanchez, C. Fernandez, Garcia-Loureiro, A., Valin, R.

Year:

2011

Language:

english

File:

PDF, 705 KB

english, 2011

9

Simulation study of scaled In 0.53 Ga 0.47 As and Si FinFETs for sub-16 nm technology nodes

Seoane, N, Aldegunde, M, Nagy, D, Elmessary, M A, Indalecio, G, García-Loureiro, A J, Kalna, K

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 1.83 MB

english, 2016

10

Metal Grain Granularity Study on a Gate-All-Around Nanowire FET

Nagy, Daniel, Indalecio, Guillermo, Garcia-Loureiro, Antonio J., Elmessary, Muhammad A., Kalna, Karol, Seoane, Natalia

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 2.75 MB

english, 2017

11

Numerical analysis of abrupt heterojunction bipolar transistors

Antonio J. Garcia-Loureiro, Juan M. Lopez-Gonzalez, Tomas F. Pena, Lluis Prat

Journal:

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Year:

1998

Language:

english

File:

PDF, 99 KB

english, 1998

12

Parallel finite element method to solve the 3D Poisson equation and its application to abrupt heterojunction bipolar transistors

Antonio J. Garcia-Loureiro, Tomas F. Pena, Juan M. Lopez-Gonzalez, Lluis Prat

Journal:

International Journal for Numerical Methods in Engineering

Year:

2000

Language:

english

File:

PDF, 553 KB

english, 2000

13

A parallel 3D semiconductor device simulator for gradual heterojunction bipolar transistors

Antonio J. García-Loureiro, J. M. López-González, Tomás F. Pena

Journal:

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Year:

2003

Language:

english

File:

PDF, 204 KB

english, 2003

14

A model for abrupt double heterojunction bipolar transistors

Antonio J. García-Loureiro, Juan M. López-González

Journal:

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Year:

2004

Language:

english

File:

PDF, 178 KB

english, 2004

15

Efficient three-dimensional parallel simulations of PHEMTs

A. J. García-Loureiro, K. Kalna, A. Asenov

Journal:

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Year:

2005

Language:

english

File:

PDF, 2.86 MB

english, 2005

16

Modified octree mesh generation for Manhattan type structures with narrow layers applied to semiconductor devices

M. Aldegunde, Juan J. Pombo, A.J. García-Loureiro

Journal:

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Year:

2006

Language:

english

File:

PDF, 853 KB

english, 2006

17

Optimization of linear systems for 3D parallel simulation of semiconductor devices: Application to statistical studies

Natalia Seoane, Antonio García-Loureiro, Manuel Aldegunde

Journal:

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Year:

2009

Language:

english

File:

PDF, 1.31 MB

english, 2009

18

Special Issue: 7th Spanish Conference on Electron Devices (CDE2009)

Antonio García-Loureiro, José Millán

Journal:

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Year:

2010

Language:

english

File:

PDF, 57 KB

english, 2010

19

Study of fluctuations in advanced MOSFETs using a 3D finite element parallel simulator

M. Aldegunde, A. J. García-Loureiro, K. Kalna, A. Asenov

Journal:

Journal of Computational Electronics

Year:

2006

Language:

english

File:

PDF, 1.12 MB

english, 2006

20

Statistical study of the effect of interface charge fluctuations in HEMTs using a 3D simulator

N. Seoane, A. J. García-Loureiro, K. Kalna, A. Asenov

Journal:

Journal of Computational Electronics

Year:

2006

Language:

english

File:

PDF, 422 KB

english, 2006

21

Atomistic effect of delta doping layer in a 50 nm InP HEMT

N. Seoane, A. J. García-Loureiro, K. Kalna, A. Asenov

Journal:

Journal of Computational Electronics

Year:

2006

Language:

english

File:

PDF, 666 KB

english, 2006

22

Random dopant related variability in the 30

Natalia Seoane, A. J. García-Loureiro, K. Kalna, A. Asenov

Journal:

Journal of Computational Electronics

Year:

2008

Language:

english

File:

PDF, 610 KB

english, 2008

23

Tetrahedral elements in self-consistent parallel 3D Monte Carlo simulations of MOSFETs

M. Aldegunde, A. J. García-Loureiro, A. Martinez, K. Kalna

Journal:

Journal of Computational Electronics

Year:

2008

Language:

english

File:

PDF, 282 KB

english, 2008

24

Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes

M. Aldegunde, Natalia Seoane, A.J. García-Loureiro, K. Kalna

Journal:

Computer Physics Communications

Year:

2010

Language:

english

File:

PDF, 1.57 MB

english, 2010

25

3D Parallel Simulations of Fluctuation Effects in pHEMTs

A.J. García-Loureiro, K. Kalna, A. Asenov

Journal:

Journal of Computational Electronics

Year:

2003

Language:

english

File:

PDF, 165 KB

english, 2003

26

[IEEE 2011 Spanish Conference on Electron Devices (CDE) - Palma de Mallorca, Spain (2011.02.8-2011.02.11)] Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 - Simulation of the temperature dependence of a-Si:H solar cell current-voltage characteristics

Otero, P., Rodriguez, J. A., Vetter, M., Andreu, J., Comesana, E., Garcia-Loureiro, A. J.

Year:

2011

Language:

english

File:

PDF, 972 KB

english, 2011

27

Multi-Subband Ensemble Monte Carlo simulation of bulk MOSFETs for the 32 nm-node and beyond

C. Sampedro, F. Gámiz, A. Godoy, R. Valín, A. García-Loureiro, N. Rodríguez, I.M. Tienda-Luna, F. Martinez-Carricondo, B. Biel

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 839 KB

english, 2011

28

Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors

Garcia-Loureiro, A.J., Seoane, N., Aldegunde, M., Valin, R., Asenov, A., Martinez, A., Kalna, K.

Journal:

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Year:

2011

Language:

english

File:

PDF, 802 KB

english, 2011

29

Benchmarking of Scaled InGaAs Implant-Free NanoMOSFETs

Kalna, K., Seoane, N., Garcia-Loureiro, A.J., Thayne, I.G., Asenov, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.49 MB

english, 2008

30

Two-Dimensional Monte Carlo Simulation of DGSOI MOSFET Misalignment

Valin, R., Sampedro, C., Aldegunde, M., Garcia-Loureiro, A., Seoane, N., Godoy, A., Gamiz, F.

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 1.11 MB

english, 2012

31

[IEEE 2013 Spanish Conference on Electron Devices (CDE) - Valladolid, Spain (2013.02.12-2013.02.14)] 2013 Spanish Conference on Electron Devices - Nanodevice simulations on CloudStack

Gomez-Folgar, F., Comesana, E., Valin, R., Garcia-Loureiro, A., Pena, T. F.

Year:

2013

Language:

english

File:

PDF, 2.90 MB

english, 2013

32

Impact of series and shunt resistances in amorphous silicon thin film solar cells

Fortes, M., Comesaña, E., Rodriguez, J.A., Otero, P., Garcia-Loureiro, A.J.

Journal:

Year:

2014

Language:

english

File:

PDF, 1.01 MB

english, 2014

33

Quantum Corrections Based on the 2-D Schrödinger Equation for 3-D Finite Element Monte Carlo Simulations of Nanoscaled FinFETs

Lindberg, Jari, Aldegunde, Manuel, Nagy, Daniel, Dettmer, Wulf G., Kalna, Karol, Garcia-Loureiro, Antonio Jesus, Peric, Djordje

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 2.69 MB

english, 2014

34

Analysis of high concentrator photovoltaic modules in outdoor conditions: Influence of direct normal irradiance, air temperature, and air mass

Fernández, Eduardo F., Rodrigo, P., Fernández, J. I., Almonacid, F., Pérez-Higueras, P., García-Loureiro, A. J., Almonacid, G.

Journal:

Journal of Renewable and Sustainable Energy

Year:

2014

Language:

english

File:

PDF, 1.39 MB

english, 2014

35

[IEEE 2013 Spanish Conference on Electron Devices (CDE) - Valladolid, Spain (2013.02.12-2013.02.14)] 2013 Spanish Conference on Electron Devices - Simulation of a-Si:H dual junction solar cells

Garcia-Rivera, A., Comesana, E., Garcia-Loureiro, A. J., Valin, R., Rodriguez, J. A., Vetter, M.

Year:

2013

Language:

english

File:

PDF, 478 KB

english, 2013

36

Melanotic neuroectodermal tumour of maxilla

Aldegunde, Manuel, Garcia-Loureiro, Antonio Jesus, Kalna, Karol

Journal:

Journal of Dentistry

Year:

1981

Language:

english

File:

PDF, 79 KB

english, 1981

37

3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors

Aldegunde, Manuel, Garcia-Loureiro, Antonio Jesus, Kalna, Karol

Journal:

IEEE Transactions on Electron Devices

Year:

2013

Language:

english

File:

PDF, 906 KB

english, 2013

38

[IEEE 2009 Spanish Conference on Electron Devices (CDE) - Santiago de Compostela, Spain (2009.02.11-2009.02.13)] 2009 Spanish Conference on Electron Devices - Mesh Generation for the "Atomistic" Simulation of Variability in InGaAs Implant-Free NanoMOSFETs

Aldegunde, Manuel, Garcia-Loureiro, Antonio J., Seoane, Natalia, Asenov, Asen, Kalna, Karol

Year:

2009

Language:

english

File:

PDF, 856 KB

english, 2009

39

[IEEE 2009 Spanish Conference on Electron Devices (CDE) - Santiago de Compostela, Spain (2009.02.11-2009.02.13)] 2009 Spanish Conference on Electron Devices - Quantum-Monte Carlo simulation of ultra-short DGSOI devices: A Multi-Subband approach

Sampedro, Carlos, Valin, Raul, Gamiz, Francisco, Garcia-Loureiro, Antonio, Godoy, Andres, Ruiz, F. G.

Year:

2009

Language:

english

File:

PDF, 3.54 MB

english, 2009

40

[IEEE Conference on Electron Devices, 2005 Spanish - Tarragona, Spain (2-4 Feb. 2005)] Conference on Electron Devices, 2005 Spanish - 3D parallel simulation o f InP/InGaAs HBT

Garcia-Loureiro, A.J., Lopez-Gonzalez, J.M.

Year:

2005

Language:

english

File:

PDF, 651 KB

english, 2005

41

[IEEE 2009 5th IEEE International Conference on e-Science (e-Science) - Oxford, United Kingdom (2009.12.9-2009.12.11)] 2009 Fifth IEEE International Conference on e-Science - The MOSFET Virtual Organisation: Grid Computing for Simulation in Nanoelectronics

Valin, R., Seoane, N., Aldegunde, M., Garcia-Loureiro, A.

Year:

2009

Language:

english

File:

PDF, 253 KB

english, 2009

42

[IEEE 2007 Spanish Conference on Electron Devices - Madrid, Spain (2007.01.31-2007.02.2)] 2007 Spanish Conference on Electron Devices - Analysis of the impact of intrinsic parameter fluctuations in a 50 nm InP HEMT

Seoane, Natalia, Garcia-Loureiro, Antonio, Kalna, Karol, Asenov, Asen

Year:

2007

Language:

english

File:

PDF, 1.74 MB

english, 2007

43

[IEEE 2007 Spanish Conference on Electron Devices - Madrid, Spain (2007.01.31-2007.02.2)] 2007 Spanish Conference on Electron Devices - Mesh Generation for "Atomistic" Simulation of Nanometre Scale MOSFETs

Aldegunde, Manuel, Garcia-Loureiro, Antonio J., Kalna, Karol, Asenov, Asen

Year:

2007

Language:

english

File:

PDF, 2.81 MB

english, 2007

44

[IEEE 2014 15th International Conference on Ultimate Integration on Silicon (ULIS) - Stockholm, Sweden (2014.04.7-2014.04.9)] 2014 15th International Conference on Ultimate Integration on Silicon (ULIS) - 3D Monte Carlo study of scaled SOI FinFETs using 2D Schrödinger quantum corrections

Elmessary, Muhammad A., Nagy, Daniel, Aldegunde, Manuel, Lindberg, Jari, Dettmer, Wulf G., Peric, Djordje, Garcia-Loureiro, Antonio J., Martinez, Antonio, Kalna, Karol

Year:

2014

Language:

english

File:

PDF, 631 KB

english, 2014

45

[IEEE 2013 Spanish Conference on Electron Devices (CDE) - Valladolid, Spain (2013.02.12-2013.02.14)] 2013 Spanish Conference on Electron Devices - Study of statistical variability in nanoscale transistors introduced by LER, RDF and MGG

Indalecio, G., Garcia-Loureiro, A., Aldegunde, M., Kalna, K.

Year:

2013

Language:

english

File:

PDF, 451 KB

english, 2013

46

[IEEE 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications - Glasgow, UK (13-14 Nov. 2000)] 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) - Modelling and simulation of Al/sub x/Ga/sub 1-x/As/GaAs HBTs using the finite element method

Garcia-Loureiro, A.J., Pena, T.F., Lopez-Gonzalez, J.M., Vinas, L.P.

Year:

2000

Language:

english

File:

PDF, 375 KB

english, 2000

47

Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In0.53Ga0.47As GAA MOSFET

Seoane, N., Indalecio, G., Comesana, E., Garcia-Loureiro, A. J., Aldegunde, M., Kalna, K.

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 512 KB

english, 2013

48

[IEEE 2014 15th International Conference on Ultimate Integration on Silicon (ULIS) - Stockholm, Sweden (2014.04.7-2014.04.9)] 2014 15th International Conference on Ultimate Integration on Silicon (ULIS) - Scaling of metal gate workfunction variability in nanometer SOI-FinFETs

Indalecio, G., Seoane, N., Aldegunde, M., Kalna, K., Garcia-Loureiro, A. J.

Year:

2014

Language:

english

File:

PDF, 309 KB

english, 2014

49

[IEEE ESSDERC 2010 - 40th European Solid State Device Research Conference - Sevilla, Spain (2010.09.14-2010.09.16)] 2010 Proceedings of the European Solid State Device Research Conference - Multi-Subband Monte Carlo simulation of bulk MOSFETs for the 32nm-node and beyond

Sampedro, Carlos, Gamiz, Francisco, Godoy, Andres, Valin, Raul, Garcia-Loureiro, Antonio, Rodriguez, Noel

Year:

2010

Language:

english

File:

PDF, 456 KB

english, 2010

50

[IEEE 2014 International Workshop on Computational Electronics (IWCE) - Paris, France (2014.6.3-2014.6.6)] 2014 International Workshop on Computational Electronics (IWCE) - Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

Abdikarimov, A., Indalecio, G., Comesana, E., Garcia-Loureiro, A. J., Seoane, N., Kalna, K., Atamuratov, A. E.

Year:

2014

Language:

english

File:

PDF, 745 KB

english, 2014

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